HomeEducationGraduate and Undergraduate ProgramsResearch Experience for Undergraduates (REU)REU 2015 ProjectsCharacterization of Cubic and Hexagonal BN

Characterization of Cubic and Hexagonal BN

Professor: Michael Spencer
SpencerProject Description: Recent demonstrations of 2D hexagonal Boron-Nitride/Graphene/ hexagonal Boron-Nitride (hBN/Gr/hbN) heterostructures, where the stacked layer were shown to exhibit electrical mobility >100x larger than Silicon based devices; our lab is currently pursuing the large-scale growth of these stacked layers. Part of the effort focuses on the growth and characterization of hBN via CVD. BN is a material that comes in different crystal structures.  An interesting metastable structure of BN is cubic BN (cBN).  Unlike hBN, which is an insulator and a direct gap material, cBN is an indirect gap material and conducting.  The REU project is to characterize hBN and cBN The REU student would be trained in learning various characterization methods, including but not limited to:

  • Atomic Force microscopy (AFM)
  • UV Spectroscopy
  • Raman Spectroscopy
  • Scanning Electron Microscopy (SEM)
  • Energy Dispersive Spectroscopy (EDS)

The goal is to understand the properties of bulk hBN, cBN as well as large area hBN grown by various CVD processes.

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